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readme.md

RRAM I-V Sample Data #2

Device description:

  1. Device structure: Co/NiO/Pt
  2. Resistive switch type: bipolar
  3. Oxide layer thinkness: 55nm

Plot I-V sample data

i-v

Data

raw ascci V-I

matlab

note: first column: voltage (Vcell), second column: absolute value of the current (Icell)

Reference

Extracted from:

G. Ma, X. Tang, H. Su, Y. Li, H. Zhang and Z. Zhong, "Effects of Standard Free Energy on NiO Bipolar Resistive Switching Devices," in IEEE Transactions on Electron Devices, vol. 61, no. 5, pp. 1237-1240, May 2014.

doi: 10.1109/TED.2014.2309975

URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6777282&isnumber=6802373