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i-v-2-8.csv		i-v-2-8.csv
i-v-2-8.mat		i-v-2-8.mat
i-v-2-8.svg		i-v-2-8.svg
readme.md		readme.md

readme.md

RRAM I-V Sample Data #12

Device description:

Device structure: HoTiOx
Resistive switch type: bipolar
Oxide layer thinkness: 18.7 nm

Plot I-V sample data

Data

note: first column: voltage (Vcell), second column: absolute value of the current (Icell)

Reference

Extracted from: